ALD1110EPAL

N/A

MOSFET 2N-CH 10V 8DIP

ALD1110EPAL

RoHSSamhæft RoHS
ALD1110EPAL
Framleiðandi
N/A
Framleiðendur Hluti #
ALD1110EPAL
Flokkar
Afmarkaðir hálfleiðurum
Undirflokkar
Smári - FETs, MOSFETs - fylki
Röð
EPAD®
hluti StaðaActive
FET Tegund2 N-Channel (Dual) Matched Pair
FET LögunStandard
Holræsi Source Voltage (Vdss)10V
Current - Stöðug Drain (Id) @ 25 ° C-
Kveikt á RDS (Max) @ Id, Vgs500 Ohm @ 5V
Vgs (th) (Max) @ Id1.01V @ 1µA
Gate Charge (QG) (Max) @ Vgs-
Inntak Rýmd (CISS) (Max) @ VDS2.5pF @ 5V
Power - Max600mW
Vinnuhitastig0°C ~ 70°C (TJ)
Festingar TegundThrough Hole
Pakki / Case8-DIP (0.300", 7.62mm)
Birgir Tæki Package8-PDIP
Hlutanúmer framleiðanda Lýsing Magn í boði Einingaverð
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Panta

Viðmiðunarverð:
50:$1.37622

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